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The innovative Semiconductor Company! HVV0912-150 HigH Voltage, HigH Ruggedness
TM
L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
FeatuRes
* Silicon MOSFET Technology * Operation from 24V to 50V * High Power Gain * Extreme Ruggedness * Internal Input and Output Matching * Excellent Thermal Stability * All Gold Bonding Scheme
tYPiCal PeRFoRManCe
High voltage vertical technology is well suited for high power pulsed applications in the L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications. MODE Class AB FREQUENCY
(MHz)
VDD
(V)
IDQ
(mA)
Power
(W)
GAIN
(dB)
EFFICIENCY
(%)
IRL
(dB)
VSWR 20:1
1215
50
50
150
20
43
-5
Table 1: Typical RF Performance in broadband text fixture at 25C temperature with RF pulse conditions of pulse width = 10s and pulse period = 100s.
desCRiPtion
The high power HVV0912-150 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 960MHz to 1215MHz. The high voltage HVVFETTM technology produces over 150W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power..
oRdeRing inFoRMation
Device Part Number: HVV0912-150 Demo Kit Part Number: HVV0912-150-EK Available through Richardson Electronics (http://rfwireless.rell.com/)
HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044
ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS11A 12/11/08 1
The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness HVV0912-150 High Voltage, High Ruggedness UHF Pulsed Power Transistor HVV0912-150 HigH Voltage, HigH Ruggedness UHF Pulsed Power Transistor 960-1215 MHz, 10s Pulse, 10% Duty Cycle 960-1215 MHz, 10s Pulse, 10% Duty Cycle L-Band Avionics Pulsed Power For Ground and Air DME, TCAS and IFF ApplicationsTransistor For Ground and Air DME, TCAS and MHz, 10s Pulse, 10% Duty Cycle 960-1215 IFF Applications % Duty For Ground and Air DME, TCAS and IFF Applications % Duty
TM
ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS eleCtRiCal CHaRaCteRistiCs
Drain-Source Breakdown Drain-Source Breakdown Drain Leakage Current Drain Leakage Current Gate Leakage Current Drain Leakage Current Gate Leakage Current Power Gain Gate Leakage Current Power Return Loss Input Gain Power Return Loss Input Gain Drain Efficiency Input Return Loss Drain Quiescent Voltage Gate Efficiency Drain Efficiency Voltage Gate Quiescent Threshold Voltage Gate Quiescent Voltage Threshold Voltage Threshold Voltage
The innovative Semiconductor Company! The innovative Semiconductor Company!
Symbol Symbol Symbol VBR(DSS) VBR(DSS) VBR(DSS) IDSS IDSS IGSS IDSS IGSS GP1 IGSS GP1 1 IRL GP1 IRL1 D1 1 IRL D1 VGS(Q)2 D1 VGS(Q)2 VTH VGS(Q)2 VTH VTH
Parameter Breakdown Parameter Drain-Source
Parameter
VGS=0V,ID=5mA VGS=0V,ID=5mA VGS=0V,VDS=50V VGS=0V,VDS=50V VGS=5V,VDS=0V VGS=0V,VDS=50V VGS=5V,VDS=0V F=1215MHz VGS=5V,VDS=0V F=1215MHz F=1215MHz F=1215MHz F=1215MHz F=1215MHz F=1215MHz F=1215MHz VDD=50V,IDQ=50mA F=1215MHz VDD=50V,IDQ=50mA VDD=5V, ID=300A VDD=50V,IDQ=50mA VDD=5V, ID=300A VDD=5V, ID=300A
Conditions Conditions VGS=0V,ID=5mA
Conditions
Min
95 18 41 1.1 0.7
Min Typical Typical Typical Max Min 95 102 95102 102 50 50 - 50 1 200 1 18 20 18 1 20 5 -5 20 -5 41 43 41 -5 43-3.5 1.1 1.45 1.143 1.45 0.7 1.2 1.45 0.7 1.21.8 1.2 1.7
Max Unit Unit Unit Max V V 200 V A 200 5 A A A 5 A dB - A dB -3.5 dB -3.5dB dB % - dB % 1.8 V 1.8 % V 1.7 V 1.7 V V V
PULSE CHARACTERISTICS PULSE CHaRaCteRistiCs Pulse CHARACTERISTICS
Symbol Parameter Symbol Parameter Symbol Parameter tr11 Rise Time Rise Time Tr tr1 Rise Time tf1 Fall Time Fall Time tf111 Fall Time Tf PD Pulse Droop PD1 Pulse Droop PD1 Pulse Droop Conditions F=1215MHz F=1215MHz F=1215MHz F=1215MHz F=1215MHz F=1215MHz F=1215MHz F=1215MHz F=1215MHz Conditions Conditions Typical MinMin Typical Max Min ---Typical <17 <17 <17 50 <27 <27 0.25 50 <27 0.25 0.25 0.5 Max Units Unit Max Units 50 nS nS nS 50 50 nS nS nS 50 0.5 dB 0.5 dB dB
THERMAL PERFORMANCE THERMAL PeRFoRManCe tHeRMal PERFORMANCE
Symbol Symbol JC1 JC1 Parameter Parameter Thermal Resistance Thermal Resistance Max Max 0.13 0.13 Unit Unit C/W C/W
RUGGEDNESS PERFORMANCE RUGGEDNESS PERFORMANCE
Ruggedness PeRFoRManCe
Parameter Parameter Load Load Mismatch Mismatch Tolerance Tolerance Test Condition Test1215 MHz F = Condition F = 1215 MHz Symbol Symbol LMT1 LMT1 Max Max 20:1 20:1 Units Units VSWR VSWR
The HVV0912-150 device is capable of withstanding an output load mismatch The HVV0912-150 is capable of withstanding an withstanding 20:1 VSWR TheHVV0912-150 device 20:1 VSWR capable of output load mismatch corresponding to amismatch corresponding to a device is at rated output power andan output load nominal operating voltage corresponding to a 20:1 VSWR at rated output the frequency band of operation. power and nominal operating voltage at rated the frequency band operating voltage acrossoutput power and nominalof operation. across across the frequency band of operation.
NOTE: All parameters measured under pulsed conditions at 150W output power measured at the 10% 1.) NOTE: All parameters measured under cycle = conditions = 150W output power point of the pulse with pulse width = 10sec, dutypulsed10% and VDDat 50V, IDQ = 50mA in a broad1.) NOTE: All the 10% point of the pulse with pulseconditions at 150W output power measured at parameters measured under pulsed width = 10sec, duty cycle = 10% band matched test fixture. measured at theIDQ =point of thebroadband matched test fixture. duty cycle = 10% 10% 50mA in a pulse with pulse width = 10sec, 2 and VDD = 50V, NOTE: Amount of gate voltage required to attain nominal quiescent current. and VDD = 50V, IDQ = 50mA in a broadband matched test fixture.
1
2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.
HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 HVVi Semiconductors,100 10235 S. 51st St. Suite Inc. Phoenix, AZ. 85044 10235 S. 51st 85044 100 Phoenix, Az. St. Suite Phoenix, Az. 85044
ISO 9001:2000 Certified ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or Certified ISO 9001:2000 visit www.hvvi.com Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 (866) Semiconductors, Inc.visitRights Reserved. Tel: HVVi 429-HVVi (4884) or All www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS11A EG-01-DS11A 12/11/08 EG-01-DS11A 12/12/08 2 12/12/08 2 2
The innovative Semiconductor Company!
HVV0912-150 High Voltage,HVV0912-150 HigH Voltage, HigH Ruggedness High Ruggedness UHF Pulsed Power Transistor L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10s Pulse, 10% Duty Cycle10s Pulse, 10% Duty Cycle 960-1215 MHz, For Ground and Air DME, TCAS Ground and Air DME, TCAS and IFF Applications For and IFF Applications % Duty
TM
Zo = 10
1215MHz
The innovative Semiconductor Company!
ZIN
*
ZOUT*
960MHz
HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Phoenix, Az. 85044
10235 S. 51st St. Suite 100 Phoenix, AZ. 85044
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved.
ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com ISO 9001:2000 Certified (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS11A 12/12/08 EG-01-DS11A 3
12/11/08 3
The innovative Semiconductor Company!
HVV0912-150 High Voltage, High Ruggedness HVV0912-150 High Voltage, High RuggednessPower Transistor L-Band Avionics Pulsed UHF Pulsed Power Transistor 960-1215 UHF Pulsed Power Transistor DutyMHz, 10s Pulse, 10% Duty Cycle 960-1215 MHz, 10s Pulse, 10% Cycle 960-1215 MHz, 10s Pulse, For Ground and Air DME, TCAS and IFF Applications 10%and IFF Applications Duty Cycle For Ground and Air DME, TCAS For Ground and Air DME, TCAS and IFF Applications % Duty % Duty
TM
HVV0912-150 HigH Voltage, HigH Ruggedness
The The innovative Semiconductor Company! innovative Semiconductor Company!
(AutoCAD (4) SCAS-0440-08C Alloy Screws Files for Demonstration Board available online at www.hvvi.com/products) Small Parts Inc 4-40 X 1/2 Alloy Socket Cap screw Hex Head HVV0912-150 Demonstration Circuit Board Bill (AutoCAD Files for Demonstration Board available online at Billof Materials HVV1012-250 Demonstration Circuit Board www.hvvi.com/products) of Materials
Metal Washers(4) #4 Washer Zinc PLTD Steel Lock ZSLW-004-M
Small Parts Inc
Part C1,C2,C13 : Part C14: C1,C2,C13 : C15, C19: C14: C20: C16, C15, C19: C14: C16, C20: R1: C14: R2: R1: C3: R2: C5: C4, C3: C6: C4, C9: C7, C5: C6: C8: C7, C9: C10, C11: C8: C12: C18: C10, C11: C15: C12: RF Connectors (2) C18: DC Drain Conn C15: DC Ground Conn. RF Connectors (2) DC Drain Conn DC Gate Conn. PCB Board DC Ground Conn. Heat Sink DC Gate Conn. Device Clamp PCB Board S.S. Screws Heat Sink (3) Alloy Screws (4) Device Clamp Metal Washers(4) S.S. Screws (3)
Demonstration Board Outline Demonstration Circuit Board Picture Demonstration Board Outline DemonstrationCircuit Board Picture (AutoCAD Files Board Outline online at www.hvvi.com/products) Description Part Number Manufacturer Demonstration for Demonstration Board available Demonstration Circuit Board Picture
39.0 pF ATC 100B Chip Capacitor Description 1.0 uF, 100V Chip Capacitor (X7R 1210) 39.0 pF ATC 100B Chip Capacitor 10K pF 100V Chi Capacitor (X7R 1206) 1.0 uF, 100V Chip Capacitor (X7R 1210) 1K pF 100V Chi Capacitor (X7R 1206) 10K ATC 100B Chip Capacitor 47 pFpF 100V Chi Capacitor (X7R 1206) 1K pF 100V Chi Capacitor (X7R 1206) 10 Ohms Chip Resistor (1206) SMD 47 pF ATC Chip Chip Capacitor 1.0 K Ohms 100B Resistor (1206) SMD 10 Ohms 100B Chip Capacitor 2.2 pF ATCChip Resistor (1206) SMD 1.0 K ATC 100B Chip Capacitor 2.0 pF Ohms Chip Resistor (1206) SMD 2.2 pF ATC 100B Chip Capacitor 2.7 pF ATC 100B Chip Capacitor 2.0 pF ATC 100B Chip Capacitor 1.0 pF ATC 100B Chip Capacitor 2.7 pF ATC 100B Chip Capacitor 1.8 pF ATC 100B Chip Capacitor 1.0 pF ATC 100B Chip Capacitor 3.3 pF ATC 100B Chip Capacitor 1.8 pF ATC Capacitor 15.0 pF ATC 100B Chip Capacitor 10uFpF ATC 100B Chip Capacitor 3.3 63V Elect FK SMD 220uFpF ATC 100B Chip Capacitor 15.0 63V Elect FK SMD Type "N" RF connectors 10uF 63V Elect FK SMD Connector Jack Banana Nylon Red 220uF 63V Elect FK SMD ConnectorRF connectors Type "N" Jack Banana Nylon Black Connector Jack Banana Nylon Green Connector Jack Banana Nylon Red PCB: Arlon, 30 mils thick, Nylon Black Connector Jack Banana 2.55 Dielectric, 2 oz Copper Cool InnovationsBanana Nylon Green Connector Jack Aluminum Heat Sink Cool Innovations Nylon Clamp Foot PCB: Arlon, 30 mils thick, 2.55 Dielectric, 2 oz Copper 4-40 XInnovations Aluminum Heat Sink Cool 1/4 Stainless Steel Hex Head Socket Screws 4-40 XInnovations NylonCap screw Hex Head Cool 1/2 Alloy Socket Clamp Foot #4 Washer Zinc PLTD Steel Lock Head Socket Screws 4-40 X 1/4 Stainless Steel Hex 100B390JP500X Part Number GRM32ER72A105MA01L 100B390JP500X C1206C103K1RACTU GRM32ER72A105MA01L C1206C102K1RACTU C1206C103K1RACTU 100B470JP500X C1206C102K1RACTU RC1206JR-07100KL 100B470JP500X RC1206JR-07102KL RC1206JR-07100KL 100B2R2JP500X RC1206JR-07102KL 100B2R0JP500X 100B2R2JP500X 100B2R7JP500X 100B2R0JP500X 100B1R0JP500X 100B2R7JP500X 100B1R8JP500X 100B1R0JP500X 100B3R3JP500X 100B1R8JP500X 100B150JP500X EEV-FK1J100P 100B3R3JP500X EEV-FK1J221Q 100B150JP500X 5919CC-TB-7 EEV-FK1J100P J151-ND EEV-FK1J221Q J152-ND 5919CC-TB-7 J153-ND J151-ND DS2346 J152-ND 3-252510RS3411 J153-ND FXT000158 Rv.B DS2346 P242393 3-252510RS3411
ATC Manufacturer Murata ATC Kemet Murata Kemet Kemet ATC Kemet DIGI-KEY ATC DIGI-KEY DIGI-KEY ATC DIGI-KEY ATC ATC ATC ATC ATC ATC ATC ATC ATC ATC ATC Panasonic ATC Panasonic ATC Coaxicom Panasonic DIGI-KEY Panasonic DIGI-KEY Coaxicom DIGI-KEY DIGI-KEY DS Electronics DIGI-KEY CoolDIGI-KEY Innovation CoolDS Electronics Innovation
Small Parts Inc Cool Innovation Small Parts Inc Bolt Copper State
SCAS-0440-08C
Copper State Bolt Cool Innovation
FXT000158 Rv.B ZSLW-004-M P242393
HVV0912-150 Demonstration Circuit Board Bill of Materials
HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 HVVi Semiconductors, Inc. Phoenix, AZ. 85044 st
10235 S. 51 St. Suite 100 Phoenix, Az. 85044
HVVi Semiconductors, Inc. ISO 9001:2000 Certified ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com Tel:2008 HVVi Semiconductors, visitAll Rights Reserved. (c) (866) 429-HVVi (4884) or Inc. www.hvvi.com ISO 9001:2000 Certified (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS11A EG-01-DS11A 12/12/08 12/11/08 4 EG-01-DS11A 4 12/12/08 4
The innovative Semiconductor Company! HVV0912-150 HigH Voltage, HigH Ruggedness Pulsed HVV0912-150 High Voltage,L-Band Avionics10s Pulse, 10% Duty Cycle High Ruggedness Power Transistor 960-1215 MHz, UHF Pulsed Power Transistor Ground and Air DME, TCAS and IFF Applications For 960-1215 MHz, 10s Pulse, 10% Duty Cycle For PaCKage diMensions TCAS and IFF Applications Ground and Air DME, %PACKAGE DIMENSIONS Duty
TM
DRAIN GATE SOURCE
The innovative Semiconductor Company!
Note: Drawing Note: Drawing is not actual size. is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use ofHVVi Semiconductors,Use of HVVi productsISO 9001:2000 Certified in life support systems is not such information. Inc. as critical components EG-01-DS11A authorized. No Suite 100 either express or429-HVVi (4884) or visit www.hvvi.com HVVi intellectual property licenses, implied, are conveyed under any Tel: (866) 12/11/08 10235 S. 51st St. rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, 5 (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. Phoenix, AZ. 85044 Inc.

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